INFINEON IPA65R190E6XKSA1 Power MOSFET, N Channel, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V MCS 55406 61-point High Density Reticular AF

61-point High Density Reticular AF system with up to 41 cross-type AF points

Data rate is 400Kbps

5mm) angled male Connector 2 2x RCA male Packaging Info Package Weight 0

Material Powder-coated marine-grade aluminum Ball 1

Canon Matte Coated Paper for Inkjet (170 gsm) - 60" x 100' Roll

INFINEON IPA65R190E6XKSA1 Power MOSFET, N Channel, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V MCS 55406 61-point High Density Reticular AFThis is a Power MOSFET, N Channel, 20. 2 A, 650 V, 0. 17 ohm, 10 V, 3 V product from INFINEON with the model number IPA65R190E6XKSA1Product details Drain Source Voltage Vds 650V Transistor Case Style TO 220FP Transistor Polarity N Channel Power Dissipation Pd 34W Threshold Voltage Vgs 3V Product Range Rds(on) Test Voltage Vgs 10V Operating Temperature Max 150C Continuous Drain Current Id 20. 2A No. of Pins 3Pins On Resistance Rds(on) 0. 17ohm MSL