VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 9 kg) Packaging Info Box

9 kg) Packaging Info Box Dimensions (LxWxH) 14

Celestron AstroMaster 130EQ-MD 130mm f/5 Reflector Telescope

copper body/front point

Equivalent Noise: 25dBA SPL (per IEC651) Maximum Input Sound Level 110dB (clipping SPL) Output Impedance 3k

1/4" Mono Unbalanced Handset 1/4" Phone Isolation Not specified by manufacturer Phone Line Connects to wireless Phone inputs via 1/4" jack Impedance Inputs

VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 9 kg) Packaging Info BoxThe SIHG73N60E GE3 is a 650V N channel MOSFET with super junction technology to minimize on resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications. 100% Avalanche rated Low figure of merit Ron X Qg Ultra low gate charge Applications